- 专利标题: SILICON METAL OXIDE ENCAPSULATION FILM COMPRISING METAL OR METAL OXIDE IN THIN FILM, AND MANUFACTURING METHOD THEREFOR
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申请号: US17435350申请日: 2020-03-06
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公开(公告)号: US20220181578A1公开(公告)日: 2022-06-09
- 发明人: Myoung Woon KIM , Sang Ick LEE , Se Jin JANG , Sung Gi KIM , Jeong Joo PARK , Won Mook CHAE , A Ra CHO , Byeong il YANG , Joong Jin PARK , Gun Joo PARK , Sam Dong LEE , Haeng don LIM , Sang Yong JEON
- 申请人: DNF CO., LTD
- 申请人地址: KR Daejeon
- 专利权人: DNF CO., LTD
- 当前专利权人: DNF CO., LTD
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2019-0026707 20190308,KR10-20200027865 20200305
- 国际申请: PCT/KR2020/003156 WO 20200306
- 主分类号: H01L51/52
- IPC分类号: H01L51/52 ; C23C16/455 ; C23C16/40 ; H01L51/56 ; C23C16/56
摘要:
The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
公开/授权文献
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