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公开(公告)号：US20190135840A1
公开(公告)日：2019-05-09
申请号：US16093012
申请日：2017-04-06
申请人： DNF CO., LTD.
发明人： Myong Woon KIM , Sang Ick LEE , Won Mook CHAE , Sang Jun YIM , Kang Yong LEE , A Ra CHO , Sang Yong JEON , Haeng Don LIM
IPC分类号： C07F7/10 , C23C16/455 , C23C16/30
摘要： The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.
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2.发明申请公开(公告)号：US20180230591A1
公开(公告)日：2018-08-16
申请号：US15751719
申请日：2016-07-14
申请人： DNF CO., LTD.
发明人： Se Jin JANG , Sang-Do LEE , Sung Woo CHO , Sung Gi KIM , Byeong-il YANG , Jang Hyeon SEOK , Sang Ick LEE , Myong Woon KIM
IPC分类号： C23C16/02 , C23C16/455 , H01L21/02 , C23C16/513 , C23C16/34 , C23C16/44
CPC分类号： C23C16/0245 , C23C16/345 , C23C16/4401 , C23C16/45525 , C23C16/45542 , C23C16/45553 , C23C16/513 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02222 , H01L21/02274 , H01L21/0228
摘要： The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si—N bond under the condition of lower power and film-forming temperature, by applying an aminosilane derivative having a specific Si—N bond to a plasma atomic layer deposition method.
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公开(公告)号：US20170125243A1
公开(公告)日：2017-05-04
申请号：US15317920
申请日：2015-06-04
申请人： DNF CO.,LTD.
发明人： Se Jin JANG , Sang-Do LEE , Jong Hyun KIM , Sung Gi KIM , Sang Yong JEON , Byeong-il YANG , Jang Hyeon SEOK , Sang Ick LEE , Myong Woon KIM
IPC分类号： H01L21/02 , C23C16/455 , C23C16/34 , C01B21/068 , C07F7/10
CPC分类号： H01L21/02219 , C01B21/068 , C07F7/10 , C23C16/345 , C23C16/45536 , C23C16/45553 , H01L21/0217 , H01L21/02274 , H01L21/0228
摘要： Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
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公开(公告)号：US20220275010A1
公开(公告)日：2022-09-01
申请号：US17753170
申请日：2020-08-13
申请人： DNF CO., LTD.
发明人： Se Jin JANG , Sung Gi KIM , Jeong Joo PARK , Tae Seok BYUN , Yong Hee KWONE , Yeong Hun KIM , Haengdon LIM , Sang Yong JEON , Sang Ick LEE
IPC分类号： C07F7/21 , C23C16/34 , C23C16/40 , C23C16/455
摘要： Provided is a novel silylcyclodisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing the silicon-containing thin film using the same, and since the silylcyclodisilazane compound of the present invention has high reactivity, thermal stability and high volatility, it can be used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film by various deposition methods.
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公开(公告)号：US20220181578A1
公开(公告)日：2022-06-09
申请号：US17435350
申请日：2020-03-06
申请人： DNF CO., LTD
发明人： Myoung Woon KIM , Sang Ick LEE , Se Jin JANG , Sung Gi KIM , Jeong Joo PARK , Won Mook CHAE , A Ra CHO , Byeong il YANG , Joong Jin PARK , Gun Joo PARK , Sam Dong LEE , Haeng don LIM , Sang Yong JEON
IPC分类号： H01L51/52 , C23C16/455 , C23C16/40 , H01L51/56 , C23C16/56
摘要： The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.
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公开(公告)号：US20210147451A1
公开(公告)日：2021-05-20
申请号：US16606168
申请日：2018-04-19
申请人： DNF CO., LTD
发明人： Sung Gi KIM , Se Jin JANG , Byeong-il YANG , Joong Jin PARK , Sang-Do LEE , Jeong Joo PARK , Sam Dong LEE , Gun-Joo PARK , Sang Ick LEE , Myong Woon KIM
IPC分类号： C07F7/10 , C23C16/40 , C23C16/455 , C23C16/50
摘要： Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
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公开(公告)号：US20160200853A1
公开(公告)日：2016-07-14
申请号：US14913194
申请日：2014-08-22
申请人： Joo Hyeon PARK , DNF CO.,LTD. , SKC CO., LTD.
发明人： Joo Hyeon PARK , Myong Woon KIM , Sang Ick LEE , Tae Seok BYUN , Seung SON , Yong Hee KWONE , In Kyung JUNG , Joon Sung RYOU
CPC分类号： C08G8/04 , C08G61/12 , C08G2261/12 , C08G2261/124 , C08G2261/135 , C08G2261/3424 , C08G2261/344 , C08G2261/76 , C09D161/06 , G03F7/094 , G03F7/11 , H01L21/0271 , H01L51/0035 , H01L51/0039 , C08K5/3445
摘要： The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.
摘要翻译： 本发明涉及一种新型多用途聚合物和含有该聚合物的组合物。 本发明的聚合物和组合物对于制备具有非常好的机械和光学性能的半导体器件非常有用。
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8.发明公开公开(公告)号：US20230250114A1
公开(公告)日：2023-08-10
申请号：US18165870
申请日：2023-02-07
申请人： DNF CO., LTD.
发明人： Yong Hee KWONE , Young Jae IM , Sang Yong JEON , Tae Seok BYUN , Sang Chan LEE , Sang Ick LEE
CPC分类号： C07F7/2284 , C01G19/02 , C01G30/005 , C07F9/902 , C23C16/407 , C23C16/45536 , C23C16/45553 , C23C16/40
摘要： Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.
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公开(公告)号：US20230203655A1
公开(公告)日：2023-06-29
申请号：US18146894
申请日：2022-12-27
申请人： DNF CO., LTD.
发明人： Yong Hee KWONE , Young Jae IM , Sang Yong JEON , Tae Seok BYUN , Sang Chan LEE , Sang Ick LEE
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： C23C16/45553 , C23C16/45538 , C23C16/40
摘要： Provided are a composition for depositing an antimony-containing thin film including a novel antimony compound which may be useful as a precursor of an antimony-containing thin film and a method for manufacturing an antimony-containing thin film using the same.
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公开(公告)号：US20220139704A1
公开(公告)日：2022-05-05
申请号：US17572509
申请日：2022-01-10
申请人： DNF CO., LTD.
发明人： Sung Gi KIM , Jeong Joo PARK , Joong Jin PARK , Se Jin JANG , Byeong-il YANG , Sang-Do LEE , Sam Dong LEE , Sang Ick LEE , Myong Woon KIM
IPC分类号： H01L21/02 , C23C16/32 , C01B33/18 , C01B21/068 , C07F7/10 , C23C16/455 , C23C16/50 , C23C16/40 , C23C16/34 , C23C16/30 , C23C16/36 , C09D1/00
摘要： Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.
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