Thin film transistors having boron nitride integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a first gate stack above a substrate. A 2D channel material layer is above the first gate stack. A second gate stack is above the 2D channel material layer, the second gate stack having a first side opposite a second side. A first conductive contact is adjacent the first side of the second gate stack and in contact with the 2D channel material layer. A second conductive contact is adjacent the second side of the second gate stack and in contact with the 2D channel material layer. A hexagonal boron nitride (hBN) layer is included between the first gate stack and the 2D channel material layer, between the second gate stack and the 2D channel material layer, or both.