Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SILICON CARBIDE FIELD STOP ZONE
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Application No.: US17691251Application Date: 2022-03-10
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Publication No.: US20220199800A1Publication Date: 2022-06-23
- Inventor: Hans-Joachim Schulze , Jens Peter Konrath , Andre Rainer Stegner , Helmut Strack
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102019118803.2 20190711
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/16 ; H01L21/02 ; H01L21/04 ; H01L29/10 ; H01L29/78
Abstract:
A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.
Public/Granted literature
- US12107141B2 Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone Public/Granted day:2024-10-01
Information query
IPC分类:
