Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17546831Application Date: 2021-12-09
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Publication No.: US20220200548A1Publication Date: 2022-06-23
- Inventor: Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Yuji TAKEMATSU , Mitsunori SAMATA
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Priority: JP2020-210058 20201218
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H01L23/66 ; H03F1/56

Abstract:
A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
Public/Granted literature
- US12184243B2 Semiconductor device Public/Granted day:2024-12-31
Information query
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