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公开(公告)号：US20230282620A1
公开(公告)日：2023-09-07
申请号：US18315855
申请日：2023-05-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Yutaka SASAKI , Masayuki AOIKE
IPC: H01L25/065
CPC classification number: H01L25/0657 , H01L2225/06589 , H01L2225/06517
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.
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公开(公告)号：US20230268643A1
公开(公告)日：2023-08-24
申请号：US18308315
申请日：2023-04-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takanori UEJIMA , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Shunji YOSHIMI , Satoshi Arayashiki , Mitsunori SAMATA , Satoshi GOTO , Yutaka SASAKI , Masayuki AOIKE
CPC classification number: H01Q1/422 , H01Q1/38 , H03H3/02 , H01Q1/2283
Abstract: A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.
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公开(公告)号：US20230299061A1
公开(公告)日：2023-09-21
申请号：US18323654
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
CPC classification number: H01L25/16 , H01L25/18 , H01L24/13 , H01L24/16 , H01L2224/13082 , H01L2224/16225 , H01L24/29 , H01L2224/29186 , H01L2924/0504 , H01L24/32 , H01L2224/32145
Abstract: A radio frequency module includes a module substrate having major surfaces that face each other, a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed, a second base part that is at least partially comprised of a second semiconductor material different from the first semiconductor material and in which a power amplifier is formed, and a switch connected to an output terminal of the power amplifier. The first base part is disposed on or over the major surface; the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode; and the switch is disposed on or over the major surface.
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公开(公告)号：US20230155556A1
公开(公告)日：2023-05-18
申请号：US18054191
申请日：2022-11-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yuri HONDA , Jun ENOMOTO , Mitsunori SAMATA
CPC classification number: H03F1/565 , H03F3/245 , H03F3/602 , H03F3/19 , H03F2200/451 , H03F2200/318
Abstract: A matching circuit includes: a first wire having one end connected to a first terminal and another end; a second wire having one end connected to the other end of the first wire and another end connected to a first reference potential and electromagnetically coupled to the first wire; and a third wire having one end connected to the one end of the second wire and another end connected to a second terminal and electromagnetically coupled to at least one of the first wire and the second wire.
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公开(公告)号：US20220189893A1
公开(公告)日：2022-06-16
申请号：US17546681
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Mitsunori SAMATA
IPC: H01L23/66 , H01L25/16 , H01L23/367 , H03F3/195 , H04B1/44
Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch is mounted on or in a module substrate. An output matching circuit coupled between the radio-frequency amplifier circuit and the band selection switch is on or in the module substrate. The semiconductor device includes a first member at which the band selection switch having a semiconductor element made of an elemental semiconductor is formed and a second member joined to the first member in surface contact therewith. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. Conductive protrusions are raised from first and second members. The semiconductor device is mounted on or in the module substrate with the conductive protrusions interposed therebetween, and in plan view, is in close proximity to the output matching circuit or overlaps a passive element constituting the output matching circuit.
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Patent Agency Ranking
公开(公告)号：US20210143783A1
公开(公告)日：2021-05-13
申请号：US17094320
申请日：2020-11-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mitsunori SAMATA , Atsushi ONO , Masaki TADA
Abstract: A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.
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公开(公告)号：US20230020088A1
公开(公告)日：2023-01-19
申请号：US17955570
申请日：2022-09-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shigeru TSUCHIDA , Daerok OH , Takahiro KATAMATA , Satoshi GOTO , Mitsunori SAMATA , Yoshiki YASUTOMO
Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
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公开(公告)号：US20220311385A1
公开(公告)日：2022-09-29
申请号：US17806524
申请日：2022-06-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisanori NAMIE , Mitsunori SAMATA , Satoshi TANAKA
Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.
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公开(公告)号：US20200051943A1
公开(公告)日：2020-02-13
申请号：US16533982
申请日：2019-08-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsunari NAKAZAWA , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Dai NAKAGAWA , Tetsuro HARADA , Masahide TAKEBE , Naoya MATSUMOTO , Yoshiaki SUKEMORI , Mitsunori SAMATA , Yutaka SASAKI , Yuuki FUKUDA
IPC: H01L23/00 , H01L23/538 , H03F3/21 , H01L25/16 , H01L23/66 , H01L23/367 , H03F1/30
Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.
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公开(公告)号：US20200051942A1
公开(公告)日：2020-02-13
申请号：US16512790
申请日：2019-07-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsunari NAKAZAWA , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Dai NAKAGAWA , Tetsuro HARADA , Masahide TAKEBE , Naoya MATSUMOTO , Yoshiaki SUKEMORI , Mitsunori SAMATA , Yutaka SASAKI , Yuki FUKUDA
Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.
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