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公开(公告)号：US20240333223A1
公开(公告)日：2024-10-03
申请号：US18738521
申请日：2024-06-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kenzou OOMORI , Mikiko FUKASAWA , Takayuki TOMITA , Takeshi KOGURE , Toshiki MATSUI , Yuuki FUKUDA
CPC classification number: H03F1/0233 , H03F3/245 , H03F2200/105 , H03F2200/451
Abstract: A tracker module includes a module laminate, and an integrated circuit disposed on the module laminate, in which the integrated circuit includes one or more first switches included in a pre-regulator circuit, one or more second switches included in a switched-capacitor circuit, one or more third switches included in a supply modulator, a power supply terminal connected to at least one of the one or more first switches, the one or more second switches, and the one or more second switches, and a control terminal that receives a DCL signal, and in a plan view of the module laminate, the power supply terminal has a larger size than the control terminal.
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公开(公告)号：US20220199557A1
公开(公告)日：2022-06-23
申请号：US17548679
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Satoshi GOTO , Mikiko FUKASAWA
IPC: H01L23/66 , H01L25/065 , H01L23/498 , H03F3/19 , H03F1/02
Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
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公开(公告)号：US20220199558A1
公开(公告)日：2022-06-23
申请号：US17548718
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Shunji YOSHIMI , Mikiko FUKASAWA
IPC: H01L23/66 , H01L25/065 , H03F3/21
Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
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公开(公告)号：US20240235487A1
公开(公告)日：2024-07-11
申请号：US18618120
申请日：2024-03-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Takayuki TOMITA , Takeshi KOGURE , Kenzou OOMORI
CPC classification number: H03F1/0233 , H03F3/245 , H03F2200/105 , H03F2200/451
Abstract: A tracker module is provided that includes a module laminate and one or more integrated circuits that are disposed on the module laminate and that includes an integrated circuit. The integrated circuit includes a switch included in a pre-regulator circuit, at least one switch included in a switched-capacitor circuit, a first IC terminal connected to the switch included in the pre-regulator circuit, and a second IC terminal connected to one of the at least one switch included in the switched-capacitor circuit. The at least one integrated circuit includes a switch included in a supply modulator. The module laminate includes a signal line with which the first IC terminal is connected to the second IC terminal.
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公开(公告)号：US20230268951A1
公开(公告)日：2023-08-24
申请号：US18311316
申请日：2023-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yuji TAKEMATSU , Mikiko FUKASAWA , Shunji YOSHIMI
Abstract: A radio-frequency module includes a module substrate having main surfaces facing each other, a first base material at least partially formed of a first semiconductor material, and a second base material at least partially formed of a second semiconductor material having thermal conductivity higher than that of the first semiconductor material and in which a power amplifier circuit is formed. The first base material and the second base material are arranged on the main surface, the second base material is arranged between the module substrate and the first base material, bonded to the first base material, and connected to the main surface with an electrode interposed therebetween, one of the first base material and the second base material is connected to the main surface with an electrode interposed therebetween, and in plan view of the module substrate, an area of the electrode is larger than an area of the electrode.
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Patent Agency Ranking
公开(公告)号：US20200252029A1
公开(公告)日：2020-08-06
申请号：US16781058
申请日：2020-02-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Kazuhiko ISHIMOTO
Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.
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公开(公告)号：US20230307458A1
公开(公告)日：2023-09-28
申请号：US18325377
申请日：2023-05-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Toshiki MATSUI
CPC classification number: H01L27/1207 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/13014 , H01L2224/13082 , H01L2224/1403 , H01L2224/14051 , H01L2224/14155 , H01L2224/16225 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1033
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that, in plan view, has a central area and a peripheral area surrounding the central area, and a second base that has at least a part formed of a second semiconductor material different from the first semiconductor material and that includes a power amplifier circuit. In plan view, the second base is overlain by the central area, and does not overlap the peripheral area.
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公开(公告)号：US20230299804A1
公开(公告)日：2023-09-21
申请号：US18323626
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Motoji TSUDA , Mikiko FUKASAWA , Shunji YOSHIMI , Satoshi GOTO
CPC classification number: H04B1/38 , H01Q1/2283
Abstract: A radio-frequency module includes a module substrate that has a principal surface, an integrated circuit on the principal surface that includes a power amplifier circuit, and an SMD on the principal surface that includes a circuit device directly connected to the power amplifier circuit. The integrated circuit includes a first base that has at least a part formed of a first semiconductor material, and a second base that has at least a part formed of a second semiconductor material and that includes the power amplifier circuit. The first base has two sides that are opposite each other in plan view. The SMD is closer to one side than the other side in plan view. In plan view, the second base is smaller than the first base and is overlain by the first base at a position closer to the one side than to the other side.
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公开(公告)号：US20220200548A1
公开(公告)日：2022-06-23
申请号：US17546831
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI , Yuji TAKEMATSU , Mitsunori SAMATA
Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
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公开(公告)号：US20220199484A1
公开(公告)日：2022-06-23
申请号：US17554043
申请日：2021-12-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mikiko FUKASAWA , Satoshi GOTO , Shunji YOSHIMI
IPC: H01L23/367 , H01L23/66 , H03F3/195
Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
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