-
公开(公告)号：US20230299061A1
公开(公告)日：2023-09-21
申请号：US18323654
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
CPC classification number: H01L25/16 , H01L25/18 , H01L24/13 , H01L24/16 , H01L2224/13082 , H01L2224/16225 , H01L24/29 , H01L2224/29186 , H01L2924/0504 , H01L24/32 , H01L2224/32145
Abstract: A radio frequency module includes a module substrate having major surfaces that face each other, a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed, a second base part that is at least partially comprised of a second semiconductor material different from the first semiconductor material and in which a power amplifier is formed, and a switch connected to an output terminal of the power amplifier. The first base part is disposed on or over the major surface; the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode; and the switch is disposed on or over the major surface.
-
公开(公告)号：US20220199558A1
公开(公告)日：2022-06-23
申请号：US17548718
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi GOTO , Shunji YOSHIMI , Mikiko FUKASAWA
IPC: H01L23/66 , H01L25/065 , H03F3/21
Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
-
公开(公告)号：US20220189893A1
公开(公告)日：2022-06-16
申请号：US17546681
申请日：2021-12-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Mitsunori SAMATA
IPC: H01L23/66 , H01L25/16 , H01L23/367 , H03F3/195 , H04B1/44
Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch is mounted on or in a module substrate. An output matching circuit coupled between the radio-frequency amplifier circuit and the band selection switch is on or in the module substrate. The semiconductor device includes a first member at which the band selection switch having a semiconductor element made of an elemental semiconductor is formed and a second member joined to the first member in surface contact therewith. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. Conductive protrusions are raised from first and second members. The semiconductor device is mounted on or in the module substrate with the conductive protrusions interposed therebetween, and in plan view, is in close proximity to the output matching circuit or overlaps a passive element constituting the output matching circuit.
-
公开(公告)号：US20230268951A1
公开(公告)日：2023-08-24
申请号：US18311316
申请日：2023-05-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yuji TAKEMATSU , Mikiko FUKASAWA , Shunji YOSHIMI
Abstract: A radio-frequency module includes a module substrate having main surfaces facing each other, a first base material at least partially formed of a first semiconductor material, and a second base material at least partially formed of a second semiconductor material having thermal conductivity higher than that of the first semiconductor material and in which a power amplifier circuit is formed. The first base material and the second base material are arranged on the main surface, the second base material is arranged between the module substrate and the first base material, bonded to the first base material, and connected to the main surface with an electrode interposed therebetween, one of the first base material and the second base material is connected to the main surface with an electrode interposed therebetween, and in plan view of the module substrate, an area of the electrode is larger than an area of the electrode.
-
公开(公告)号：US20230208468A1
公开(公告)日：2023-06-29
申请号：US18176602
申请日：2023-03-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Reiji NAKAJIMA , Kazuhiro IKARASHI , Shunji YOSHIMI
IPC: H04B1/401
CPC classification number: H04B1/401
Abstract: Isolation between a first path and a second path is improved. A radio frequency module is capable of operating in a first mode in which simultaneous transmission, simultaneous reception, or simultaneous transmission and reception using both a first filter and a second filter is possible, and in a second mode in which transmission or reception using only the first filter is possible. A first switching element is provided in a first path that is usable between an antenna terminal and the first filter in the first mode, and a second switching element is provided between the first path and a ground. A third switching element is provided in a second path that is usable between the antenna terminal and the first filter in the second mode, and a fourth switching element is provided between the second path and the ground. The radio frequency module further includes a phase shifter.
-
Patent Agency Ranking
公开(公告)号：US20220108936A1
公开(公告)日：2022-04-07
申请号：US17494611
申请日：2021-10-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Takanori UEJIMA , Satoshi GOTO , Satoshi ARAYASHIKI
IPC: H01L23/367 , H01L23/66 , H01L23/31
Abstract: In a semiconductor module, a first conductive portion is raised on a lower surface of a first member to which a second member including a semiconductor element and being smaller than the first member in plan view is joined. A second conductive portion is raised at the second member in the same direction as the first conductive portion. The first and second members are mounted on a module substrate with the interposed first and second conductive portions. A sealing material is disposed on a mounting surface of the module substrate, while covering at least an area of the first member. The sealing material has a top surface facing in the same direction as the top surface of the first member and side surfaces connected to its top surface. A metal film is disposed on the top and side surfaces of the sealing material and side surfaces of the module substrate.
-
公开(公告)号：US20240235491A9
公开(公告)日：2024-07-11
申请号：US18403741
申请日：2024-01-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Naofumi TAKEZONO , Shunji YOSHIMI
CPC classification number: H03F1/26 , H03F3/245 , H03F2200/294 , H03F2200/451
Abstract: A power amplifier circuit includes a first amplifier, a second amplifier, a third amplifier, and a harmonic suppression circuit. The first amplifier operates on power supplied through a first supply line, and amplifies a first transmit signal in a first frequency band. The second amplifier operates on power supplied through a second supply line connected to the first supply line, and amplifies a second transmit signal in a second frequency band different from the first frequency band. The third amplifier shares an antenna with the second amplifier, and amplifies a receive signal in the second frequency band received from the antenna. The harmonic suppression circuit generates, based on a harmonic of the first transmit signal, a suppression signal to suppress the harmonic to be transferred to the first supply line, and outputs the suppression signal to the first supply line or the second supply line.
-
公开(公告)号：US20240136981A1
公开(公告)日：2024-04-25
申请号：US18403741
申请日：2024-01-04
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Naofumi TAKEZONO , Shunji YOSHIMI
CPC classification number: H03F1/26 , H03F3/245 , H03F2200/294 , H03F2200/451
Abstract: A power amplifier circuit includes a first amplifier, a second amplifier, a third amplifier, and a harmonic suppression circuit. The first amplifier operates on power supplied through a first supply line, and amplifies a first transmit signal in a first frequency band. The second amplifier operates on power supplied through a second supply line connected to the first supply line, and amplifies a second transmit signal in a second frequency band different from the first frequency band. The third amplifier shares an antenna with the second amplifier, and amplifies a receive signal in the second frequency band received from the antenna. The harmonic suppression circuit generates, based on a harmonic of the first transmit signal, a suppression signal to suppress the harmonic to be transferred to the first supply line, and outputs the suppression signal to the first supply line or the second supply line.
-
公开(公告)号：US20230282620A1
公开(公告)日：2023-09-07
申请号：US18315855
申请日：2023-05-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Yutaka SASAKI , Masayuki AOIKE
IPC: H01L25/065
CPC classification number: H01L25/0657 , H01L2225/06589 , H01L2225/06517
Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.
-
公开(公告)号：US20230268643A1
公开(公告)日：2023-08-24
申请号：US18308315
申请日：2023-04-27
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takanori UEJIMA , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Shunji YOSHIMI , Satoshi Arayashiki , Mitsunori SAMATA , Satoshi GOTO , Yutaka SASAKI , Masayuki AOIKE
CPC classification number: H01Q1/422 , H01Q1/38 , H03H3/02 , H01Q1/2283
Abstract: A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.
-
-
-
-
-
-
-
-
-
Search Results
18
records
(took 0.016 seconds)
