Invention Application
- Patent Title: SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
-
Application No.: US17409069Application Date: 2021-08-23
-
Publication No.: US20220216150A1Publication Date: 2022-07-07
- Inventor: Jongchan Shin , Woojeong Shin , Changmin Park , Noyoung Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0001672 20210106
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/417 ; H01L29/78 ; H01L29/786 ; H01L21/02 ; H01L21/8238 ; H01L29/66 ; H01L21/768

Abstract:
A semiconductor device includes a logic cell on a substrate and a first metal layer on the logic cell. The first metal layer includes first and second power lines that extend in a first direction, and first, second, and third lower interconnection lines, which are respectively disposed on first, second, and third interconnection tracks defined between the first and second power lines that extend in the first direction parallel to each other. The first lower interconnection line includes first and second interconnection lines spaced apart from each other by a first distance, and the third lower interconnection line includes third and fourth interconnection lines spaced apart from each other by a second distance. The first and third interconnection lines have first and second ends, respectively, which face the second and fourth interconnection lines, respectively, and have different curvatures.
Information query
IPC分类: