A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.