公开(公告)号：US12151936B2

公开(公告)日：2024-11-26

申请号：US17776354

申请日：2021-01-12

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Andreas Scheurle ,  Christoph Hermes ,  Peter Schmollngruber ,  Thomas Friedrich

IPC: B81C1/00 ,  B81B7/00 ,  G01L1/14 ,  H04R19/04 ,  H04R31/00

Abstract: A micromechanical component for a sensor device or microphone device. The micromechanical component includes a diaphragm with a diaphragm inner side to which an electrode structure is directly or indirectly connected; and a cavity that is formed at least in a volume that is exposed by at least one removed area of at least one sacrificial layer. At least one residual area made of at least one electrically insulating sacrificial layer material of the at least one sacrificial layer is also present at the micromechanical component, and including at least one insulation area made of at least one electrically insulating material that is not the same as the electrically insulating sacrificial layer material. The electrode structure is electrically insulated from the diaphragm, and/or the at least one residual area of the at least one sacrificial layer is delimited from the cavity, using the at least one insulation area.

公开(公告)号：US20240371577A1

公开(公告)日：2024-11-07

申请号：US18688406

申请日：2023-01-09

Applicant: Robert Bosch GmbH

Inventor： Bernd Klein ,  Jochen Reinmuth ,  Matthew Lewis ,  Peter Schmollngruber

IPC: H01H1/00 ,  H01H1/14 ,  H01H11/04

Abstract: A contact element of a MEMS relay. The contact element includes a defined number greater than one of electrically conductive contact bodies, wherein the contact bodies are arranged at least partially within a layer that is plastically deformable in a defined manner, wherein a hardness of the plastically deformable layer is less than a hardness of the contact bodies, wherein, by exerting a compressive force on the contact bodies, the contact bodies can be pressed into the plastically deformable layer and brought to a substantially uniform height level, and wherein the plastically deformable layer is arranged at least partially within an insulation layer.

公开(公告)号：US11851324B2

公开(公告)日：2023-12-26

申请号：US17291251

申请日：2019-12-13

Applicant: Robert Bosch GmbH

Inventor： Christoph Hermes ,  Hans Artmann ,  Heribert Weber ,  Peter Schmollngruber ,  Thomas Friedrich ,  Tobias Joachim Menold ,  Mawuli Ametowobla

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81C2203/0145

Abstract: A method for sealing entries in a MEMS element. The method includes: providing a functional layer having a functional region; producing a cavity underneath the functional region of the functional layer with the aid of a first entry outside of the functional region of the functional layer; sealing the first entry; producing a second entry to the cavity outside of the functional region of the functional layer; melting sealing material in the region of the second entry; and cooling off the melted sealing material to seal the second entry.

公开(公告)号：US20230339745A1

公开(公告)日：2023-10-26

申请号：US17792171

申请日：2021-03-22

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Andreas Scheurle ,  Christoph Hermes ,  Peter Schmollngruber ,  Thomas Friedrich

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00523 ,  B81B3/0024

Abstract: A method for manufacturing a micromechanical sensor. The method includes: applying a first oxide sacrificial layer onto a substrate; removing material of the substrate through openings in the first oxide sacrificial layer; closing the openings in the first oxide sacrificial layer by applying a second oxide sacrificial layer; forming a sensing area on a carrier structure, the sensing area and the carrier structure being formed on the oxide sacrificial layers and the sensing area and/or the carrier structure being connected to the substrate via at least one attachment area, which forms a flexible structure; and at least partially removing the oxide sacrificial layers between the carrier structure and the substrate with the aid of an etching process.

公开(公告)号：US20220081285A1

公开(公告)日：2022-03-17

申请号：US17446898

申请日：2021-09-03

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Peter Schmollngruber ,  Thomas Friedrich ,  Andreas Scheurle ,  Joachim Fritz ,  Sophielouise Mach

IPC: B81C1/00 ,  B81B3/00

Abstract: A production method for a micromechanical component for a sensor or microphone device. The method includes: patterning a plurality of first trenches through a substrate surface of a monocrystalline substrate made of at least one semiconductor material using anisotropic etching, covering the lateral walls of the plurality of first trenches with a passivation layer, while bottom areas of the plurality of first trenches are kept free or are freed of the passivation layer, etching at least one first cavity, into which the plurality of first trenches opens, into the monocrystalline substrate using an isotropic etching method, in which an etching medium of the isotropic etching method is conducted through the plurality of first trenches, and by covering the plurality of first trenches by epitaxially growing a monocrystalline sealing layer on the substrate surface of the monocrystalline substrate made of the at least one identical semiconductor material as the monocrystalline substrate.

公开(公告)号：US11940345B2

公开(公告)日：2024-03-26

申请号：US16721333

申请日：2019-12-19

Applicant: Robert Bosch GmbH

Inventor： Thomas Friedrich ,  Christoph Hermes ,  Hans Artmann ,  Heribert Weber ,  Peter Schmollngruber ,  Volkmar Senz

IPC: G01L9/00 ,  B81B3/00 ,  G01L1/14 ,  G01L9/12

CPC classification number: G01L9/0073 ,  B81B3/0018 ,  G01L1/148 ,  G01L9/12 ,  B81B2201/0264

Abstract: A micromechanical component for a capacitive pressure sensor device includes a substrate; a frame structure that frames a partial surface; a membrane that is tensioned by the frame structure such that a self-supporting region of the membrane extends over the framed partial surface and an internal volume with a reference pressure therein is sealed in an airtight fashion, the self-supporting region of the membrane being deformable by a physical pressure on an external side of the self-supporting region that not equal to the reference pressure; a measurement electrode situated on the framed partial surface; and a reference measurement electrode that is situated on the framed partial surface and is electrically insulated from the measurement electrode.

公开(公告)号：US20230357001A1

公开(公告)日：2023-11-09

申请号：US18246790

申请日：2021-09-30

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Andreas Scheurle ,  Hans Artmann ,  Peter Schmollngruber ,  Thomas Friedrich ,  Uwe Schiller

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257 ,  B81C2201/0105 ,  B81C2201/014 ,  B81C2203/038 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0353

Abstract: A production method for a micromechanical component for a sensor device or microphone device. The method includes: forming a supporting structure composed of a first sacrificial material on a substrate surface of a substrate with a first sacrificial material layer, a plurality of etching holes structured through the first sacrificial material layer, and a plurality of supporting posts projecting into the substrate; etching into the substrate surface at least one cavity spanned by the supporting structure; forming a diaphragm composed of at least one semiconductor material on or over the first sacrificial material layer of the supporting structure; depositing a layer stack comprising at least one sacrificial layer and at least one counter electrode; and exposing the diaphragm by at least partially removing at least the supporting structure and the at least one sacrificial layer.

公开(公告)号：US11418885B2

公开(公告)日：2022-08-16

申请号：US17147310

申请日：2021-01-12

Applicant: Robert Bosch GmbH

Inventor： Heribert Weber ,  Andreas Scheurle ,  Christoph Hermes ,  Peter Schmollngruber ,  Thomas Friedrich

IPC: H04R7/00 ,  H04R7/06 ,  H04R19/04 ,  H04R19/00

Abstract: A micromechanical component for a sensor device or microphone device. The component includes a diaphragm support structure with a diaphragm, a cavity formed in the diaphragm support structure and adjoined by a diaphragm inner side, and a separating trench structured through the surface of the diaphragm support structure and extends to the cavity and completely frames the diaphragm, and that is sealed off media-tight and/or air-tight using at least one separating trench closure material. An etching channel is formed in the diaphragm support structure, separately from the separating trench, and extends from its first etching channel end section to its second etching channel end section. The first etching channel end section opens into the cavity, and the second etching channel end section is sealed off media-tight and/or air-tight using at least one etching channel closure structure formed on an outer partial surface of the surface of the diaphragm support structure.

公开(公告)号：US20220231652A1

公开(公告)日：2022-07-21

申请号：US17647611

申请日：2022-01-11

Applicant: Robert Bosch GmbH

Inventor： Friedjof Heuck ,  Marcus Pritschow ,  Markus Kuhnke ,  Peter Schmollngruber ,  Ricardo Zamora ,  Sebastien Loiseau ,  Stefan Majoni ,  Stefan Krause ,  Viktor Morosow

IPC: H03H3/02 ,  H03H9/17 ,  H03H9/24

Abstract: A method for manufacturing a piezoelectric resonator. The method includes: depositing a piezoelectric layer and forming a recess in a lateral area in such a way that a silicon functional layer is exposed inside the recess, forming a silicide layer on a surface of the silicon functional layer exposed inside the recess, forming a diffusion barrier layer on the silicide layer, depositing and structuring a first and second metallization layer in such a way that a supply line and two connection elements are formed, forming the oscillating structure by structuring the silicon functional layer, the silicon functional layer of the oscillating structure being able to be electrically contacted via the first connection element and forming a lower electrode of the resonator, the first metallization layer of the oscillating structure being able to be electrically contacted via the second connection element and forming an upper electrode of the resonator.

公开(公告)号：US20220172981A1

公开(公告)日：2022-06-02

申请号：US17456030

申请日：2021-11-22

Applicant: Robert Bosch GmbH

Inventor： Jochen Reinmuth ,  Peter Schmollngruber

IPC: H01L21/762 ,  H01L21/02 ,  B81C1/00 ,  B81B3/00

Abstract: A method for manufacturing a polysilicon SOI substrate including a cavity. The method includes: providing a silicon substrate including a sacrificial layer thereon; producing a first polysilicon layer on the sacrificial layer; depositing a structuring layer on the first polysilicon layer; introducing trenches through the structuring layer, the first polysilicon layer, and the sacrificial layer up to the silicon substrate; producing a cavity in the silicon substrate by etching, an etching medium being conducted thereto through the trenches; producing a second polysilicon layer on the first polysilicon layer, the trenches being thereby closed. A micromechanical device is also described.