Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17617015Application Date: 2020-06-02
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Publication No.: US20220238719A1Publication Date: 2022-07-28
- Inventor: Shunpei YAMAZAKI , Hiromi SAWAI , Hiroki KOMAGATA , Yasuhiro JINBO , Naoki OKUNO , Yoshihiro KOMATSU , Motoharu ANDO , Tomoaki MORIWAKA , Koji MORIYA , Jun ISHIKAWA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP2019-111337 20190614,JP2019-156743 20190829,JP2019-165482 20190911,JP2019-183633 20191004,JP2019-239534 20191227,JP2020-050342 20200320
- International Application: PCT/IB2020/055190 WO 20200602
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.
Information query
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