公开(公告)号：US20220238719A1

公开(公告)日：2022-07-28

申请号：US17617015

申请日：2020-06-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Hiroki KOMAGATA ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Motoharu ANDO ,  Tomoaki MORIWAKA ,  Koji MORIYA ,  Jun ISHIKAWA

IPC: H01L29/786

Abstract: A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.