中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

111 records (took 0.041 seconds)

    Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权

    公开(公告)号：US20240379869A1

    公开(公告)日：2024-11-14

    申请号：US18657118

    申请日：2024-05-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Motomu KURATA ,  Ryota HODO ,  Yasuhiro JINBO ,  Tsutomu MURAKAWA ,  Satoru SAITO ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L23/528 ,  H01L23/532

    Abstract: A semiconductor device includes an oxide semiconductor layer, first to third conductive layers, and first to third insulating layers. The first conductive layer includes a first depressed portion. The first insulating layer over the first conductive layer and the second conductive layer over the first insulating layer include a first opening portion overlapping with the first depressed portion. The oxide semiconductor layer is in contact with a top surface of the second conductive layer, bottom and side surfaces of the first depressed portion, a side surface of the second conductive layer, and a side surface of the first insulating layer. The second insulating layer is positioned inside the oxide semiconductor layer in the first opening portion. The third insulating layer covers top and side surfaces of the oxide semiconductor layer over the first insulating layer, and includes a second opening portion overlapping with the first opening portion.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240379866A1

    公开(公告)日：2024-11-14

    申请号：US18691097

    申请日：2022-09-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hitoshi KUNITAKE ,  Ryota HODO ,  Yasuhiro JINBO ,  Motomu KURATA ,  Shinya SASAGAWA ,  Kunihiro FUKUSHIMA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor. The transistor includes an oxide, a first conductor and a second conductor that are over the oxide, a first insulator over the first conductor and the second conductor, a second insulator in an opening included in the first insulator, a third insulator over the second insulator, a fourth insulator over the third insulator, and a third conductor over the fourth insulator. The opening includes a region overlapping with the oxide. The third conductor includes a region overlapping with the oxide with the second insulator, the third insulator, and the fourth insulator therebetween. The second insulator is in contact with a top surface of the oxide and a sidewall of the opening. The thickness of the second insulator is smaller than that of the third insulator. The fourth insulator is less permeable to oxygen than the third insulator is. The third conductor has a width greater than or equal to 3 nm and less than or equal to 15 nm in a cross-sectional view of the transistor in the channel length direction.

Patent Agency Ranking