- 专利标题: SEMICONDUCTOR DEVICES HAVING OXIDATION CONTROL LAYER
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申请号: US17402960申请日: 2021-08-16
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公开(公告)号: US20220238795A1公开(公告)日: 2022-07-28
- 发明人: Sanghwan PARK , Younghyun KIM , Jaehoon KIM , Heeju SHIN , Sechung OH
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2021-0012133 20210128
- 主分类号: H01L43/08
- IPC分类号: H01L43/08 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L23/522 ; H01L23/528
摘要:
A semiconductor device including a substrate; a lower electrode on the substrate; a magnetic tunnel junction structure on the lower electrode, the magnetic tunnel junction structure including a pinned layer, a tunnel barrier layer, and a free layer which are sequentially stacked; an upper electrode on the magnetic tunnel junction structure; and an oxidation control layer between the free layer and the upper electrode, the oxidation control layer including at least one filter layer and at least one oxide layer, wherein the at least one filter layer includes MoCoFe.