According to one embodiment, a memory device includes: first and second stacks each including a first semiconductor layers arranged in a first direction perpendicular to a surface of a substrate, the first and second stacks arranged in a second direction parallel to the surface of the substrate; a second semiconductor layer above the first stack in the first direction; a third semiconductor layer above the second stack in the first direction; memory cells between the first semiconductor layers and the word lines; a first transistor on the second semiconductor layer; and a second transistor on the third semiconductor layer. The first and second stacks are arranged at a first pitch, the first and second semiconductor layers are arranged at a second pitch equal to the first pitch.