Invention Application
- Patent Title: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
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Application No.: US17730881Application Date: 2022-04-27
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Publication No.: US20220254811A1Publication Date: 2022-08-11
- Inventor: Masahisa IIDA , Toshihiro NAKAMURA
- Applicant: Socionext Inc.
- Applicant Address: JP Kanagawa
- Assignee: Socionext Inc.
- Current Assignee: Socionext Inc.
- Current Assignee Address: JP Kanagawa
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
An IO cell includes a first output transistor and a second output transistor. A capacitance transistor is provided between external connection pads. The capacitance transistor is placed between the output transistors and an edge of the semiconductor integrated circuit device as viewed in plan. The gate length of the capacitance transistor is smaller than the gate length of the output transistors.
Public/Granted literature
- US12274090B2 Semiconductor integrated circuit device Public/Granted day:2025-04-08
Information query
IPC分类: