Invention Application
- Patent Title: MEMORY CELLS HAVING INCREASED STRUCTURAL STABILITY
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Application No.: US17733723Application Date: 2022-04-29
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Publication No.: US20220263019A1Publication Date: 2022-08-18
- Inventor: Pavan Kumar Reddy Aella , Kolya Yastrebenetsky , Masuji Honjo
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L45/00
- IPC: H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of the PCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.
Public/Granted literature
- US12239032B2 Memory cells having increased structural stability Public/Granted day:2025-02-25
Information query
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