公开(公告)号：US20190044061A1

公开(公告)日：2019-02-07

申请号：US16147159

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Pavan Kumar Reddy Aella ,  Kolya Yastrebenetsky ,  Masuji Honjo

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of thePCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.

公开(公告)号：US12239032B2

公开(公告)日：2025-02-25

申请号：US17733723

申请日：2022-04-29

Applicant: Intel Corporation

Inventor： Pavan Kumar Reddy Aella ,  Kolya Yastrebenetsky ,  Masuji Honjo

IPC: H10N70/20 ,  G11C13/00 ,  H10B63/10 ,  H10N70/00

Abstract: A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of the PCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.

公开(公告)号：US11367833B2

公开(公告)日：2022-06-21

申请号：US16147159

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Pavan Kumar Reddy Aella ,  Kolya Yastrebenetsky ,  Masuji Honjo

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of the PCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.

公开(公告)号：US20220263019A1

公开(公告)日：2022-08-18

申请号：US17733723

申请日：2022-04-29

Applicant: Intel Corporation

Inventor： Pavan Kumar Reddy Aella ,  Kolya Yastrebenetsky ,  Masuji Honjo

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: A memory cell can include a top lamina layer, a bottom lamina layer, and a phase change material (PCM) layer between the top lamina layer and the bottom lamina layer. The PCM layer can have a top surface in direct contact with the top lamina layer and a bottom surface in direct contact with the bottom lamina layer. The top surface of the PCM layer and the bottom surface of the PCM layer can have a structurally stabilizing width ratio.