Invention Application
- Patent Title: ACTIVE ANTENNA DEVICE BASED ON SILICON RING FIELD EFFECT TRANSISTOR ARRAY
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Application No.: US17636666Application Date: 2021-09-07
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Publication No.: US20220271160A1Publication Date: 2022-08-25
- Inventor: Kyung Rok Kim , E San Jang , Min Woo Ryu , Sang Hyo Ahn
- Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Applicant Address: KR Ulsan
- Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee Address: KR Ulsan
- Priority: KR10-2020-0113599 20200907
- International Application: PCT/KR2021/012114 WO 20210907
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/06 ; H01L23/66
Abstract:
An antenna device according to an example embodiment includes a silicon substrate of first type doping, at least two first doped regions formed by second type doping different from the first type doping, a second doped region formed by the second type doping outside a channel region surrounding the at least two first doped regions, and at least two gates disposed on a dielectric layer. In the antenna device, a resonant frequency is adjusted according to an external voltage individually applied to the at least two gates, and polarization information of a terahertz (THz) light source is obtained based on a pattern and an amount of an electric field measured at the at least two gates.
Public/Granted literature
- US11784249B2 Active antenna device based on silicon ring field effect transistor array Public/Granted day:2023-10-10
Information query
IPC分类:
