公开(公告)号：US10211511B2

公开(公告)日：2019-02-19

申请号：US15537064

申请日：2015-01-23

Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Min Woo Ryu ,  Kwan Sung Kim

IPC: H01L29/788 ,  H01Q1/22 ,  G01R33/00 ,  G01J5/20 ,  H01L27/14 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  G01R33/06 ,  H01L29/06

Abstract: The purpose of the present invention is to provide a terahertz detector using a field-effect transistor capable of implementing high sensitivity by exhibiting an asymmetric characteristic only with a form of a source/drain and a gate. To this end, the present invention relates to the terahertz detector using a field-effect transistor comprising: a source formed by being doped on a portion of a silicon base; a channel formed so as to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on an upper end of the source, the channel and the drain; and a gate located at an upper end of the dielectric layer, wherein when terahertz electromagnetic waves are applied through the gate, the intensity of the electromagnetic waves is detected using a current/voltage outputted from the source and the drain.

公开(公告)号：US20220416074A1

公开(公告)日：2022-12-29

申请号：US17675628

申请日：2022-02-18

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Min Woo Ryu ,  E San Jang ,  Ramesh Patel ,  Sang Hyo Ahn

IPC: H01L29/78 ,  H01Q1/22 ,  H01Q7/00 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66

Abstract: A field-effect transistor for terahertz wave detection using a gate as an antenna includes a silicon substrate including a source and a drain formed outside a channel region surrounding the source, and a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, in which the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor and the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor.

公开(公告)号：US11784249B2

公开(公告)日：2023-10-10

申请号：US17636666

申请日：2021-09-07

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  E San Jang ,  Min Woo Ryu ,  Sang Hyo Ahn

IPC: H01L29/78 ,  H01L23/66 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7831 ,  H01L23/66 ,  H01L29/0607 ,  H01L29/0847

Abstract: An antenna device according to an example embodiment includes a silicon substrate of first type doping, at least two first doped regions formed by second type doping different from the first type doping, a second doped region formed by the second type doping outside a channel region surrounding the at least two first doped regions, and at least two gates disposed on a dielectric layer. In the antenna device, a resonant frequency is adjusted according to an external voltage individually applied to the at least two gates, and polarization information of a terahertz (THz) light source is obtained based on a pattern and an amount of an electric field measured at the at least two gates.

公开(公告)号：US20220271160A1

公开(公告)日：2022-08-25

申请号：US17636666

申请日：2021-09-07

Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  E San Jang ,  Min Woo Ryu ,  Sang Hyo Ahn

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L23/66

Abstract: An antenna device according to an example embodiment includes a silicon substrate of first type doping, at least two first doped regions formed by second type doping different from the first type doping, a second doped region formed by the second type doping outside a channel region surrounding the at least two first doped regions, and at least two gates disposed on a dielectric layer. In the antenna device, a resonant frequency is adjusted according to an external voltage individually applied to the at least two gates, and polarization information of a terahertz (THz) light source is obtained based on a pattern and an amount of an electric field measured at the at least two gates.

公开(公告)号：US10020370B2

公开(公告)日：2018-07-10

申请号：US15561940

申请日：2015-12-31

Applicant: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyung Rok Kim ,  Min Woo Ryu ,  Sang Hyo Ahn

IPC: H01L31/112 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/41758 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/78 ,  H01L31/1126 ,  H01Q1/2283

Abstract: A ring-type FET may include a silicon base, a source formed on a portion of the silicon base through doping, a channel formed to encompass the source on a plane, a drain formed outside the channel, a dielectric layer formed on the source, the channel and the drain, and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.