Invention Application
- Patent Title: Optoelectronic Integrated Substrate, Preparation Method Thereof, and Optoelectronic Integrated Circuit
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Application No.: US17500963Application Date: 2021-10-14
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Publication No.: US20220271185A1Publication Date: 2022-08-25
- Inventor: Rui HUANG , Haibin ZHU
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Priority: CN202110191311.0 20210219
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/20 ; H01L31/02 ; H01L31/0224

Abstract:
An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.
Public/Granted literature
- US11769850B2 Optoelectronic integrated substrate, preparation method thereof, and optoelectronic integrated circuit Public/Granted day:2023-09-26
Information query
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