公开(公告)号：US20210408095A1

公开(公告)日：2021-12-30

申请号：US17290495

申请日：2020-09-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin ZHOU ,  Rui HUANG ,  Wei YANG ,  Lizhong WANG ,  Zhaohui QIANG ,  Tao YANG ,  Li QIANG

IPC: H01L27/146 ,  H01L27/32 ,  H01L51/56 ,  G06K9/00

Abstract: The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

公开(公告)号：US20230163143A1

公开(公告)日：2023-05-25

申请号：US17919547

申请日：2021-11-17

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong WANG ,  Ce NING ,  Tianmin ZHOU ,  Wei YANG ,  Yunping DI ,  Rui HUANG ,  Binbin TONG ,  Liping LEI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  H01L27/124 ,  G02F1/136295 ,  H01L27/1225 ,  G02F1/13685 ,  G02F1/136209

Abstract: An array substrate and a display panel, relating to the technical field of display. The array substrate includes a base substrate, and a thin film transistor group which is provided on one side of the base substrate and includes at least two thin film transistors, the thin film transistors being stacked in a direction perpendicular to the base substrate.

公开(公告)号：US20220271185A1

公开(公告)日：2022-08-25

申请号：US17500963

申请日：2021-10-14

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui HUANG ,  Haibin ZHU

IPC: H01L31/105 ,  H01L31/20 ,  H01L31/02 ,  H01L31/0224

Abstract: An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.

公开(公告)号：US20210231990A1

公开(公告)日：2021-07-29

申请号：US17263984

申请日：2020-05-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shi SHU ,  Xiang LI ,  Chuanxiang XU ,  Yong YU ,  Haitao HUANG ,  Yang YUE ,  Qi YAO ,  Rui HUANG ,  Ge SHI ,  Kang GUO

IPC: G02F1/1368 ,  G02F1/1362

Abstract: An array substrate, a display panel and a display device are provided. The array substrate includes, a base substrate, a thin film transistor layer, a first passivation layer, a quantum dot layer, a color filter layer, a planarization layer and a metal wire grid polarizing layer that are sequentially disposed on the base substrate. The quantum dot layer is located in a display region of the array substrate, and an orthographic projection of the color filter layer on the base substrate.

公开(公告)号：US20210193841A1

公开(公告)日：2021-06-24

申请号：US16078160

申请日：2017-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong HE ,  Dongsheng LI ,  Shengguang BAN ,  Rui HUANG ,  Dongcan MI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/267 ,  H01L29/66

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

公开(公告)号：US20200074139A1

公开(公告)日：2020-03-05

申请号：US16412644

申请日：2019-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Tianmin ZHOU ,  Lizhong WANG ,  Rui HUANG

IPC: G06K9/00 ,  H01L27/32 ,  H01L51/56

Abstract: The present disclosure provides an optical fingerprint identification unit, a display panel, a method for manufacturing an optical fingerprint identification unit and a method for identifying a fingerprint. The optical fingerprint identification unit includes a substrate, and a light source, a photoluminescent layer and a light sensor above the substrate. The light source is configured to emit visible light. The photoluminescent layer is configured to receive the visible light reflected by a fingerprint and convert the received visible light into non-visible light. The light sensor is configured to detect the non-visible light.

公开(公告)号：US20200058691A1

公开(公告)日：2020-02-20

申请号：US16542441

申请日：2019-08-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Rui HUANG ,  Xin YANG ,  Tianmin ZHOU ,  Huili WU

IPC: H01L27/146

Abstract: A photoelectric detection substrate, a method for fabricating the same, and a photoelectric detection device are disclosed. The photoelectric detection substrate includes a thin film transistor and a photodiode coplanar with the thin film transistor. The thin film transistor has a vertical channel structure and includes a gate electrode, an active layer, a first electrode and a second electrode. The photodiode includes a first doped layer, an absorption layer and a second doped layer disposed in this order. The active layer and the absorption layer are disposed in a same layer and formed by a same patterning process. By forming a photodiode coplanar with a thin film transistor of a vertical channel structure, the overall thickness of the photoelectric detection substrate is effectively reduced, deformation of the substrate caused by stress is reduced, and damage caused by deformation of the substrate is avoided, and thereby the yield is improved.

公开(公告)号：US20250031465A1

公开(公告)日：2025-01-23

申请号：US18034094

申请日：2021-12-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Je HUANG ,  Feifei LI ,  Yuhang LU ,  Rui HUANG ,  Fengjuan LIU

IPC: H01L27/146

Abstract: A photoelectric sensor and a substrate are disclosed. The photoelectric sensor includes a photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode is arranged on a side of the photoelectric conversion layer, and the second electrode is arranged on a side of the photoelectric conversion layer and is spaced apart from the first electrode; wherein the first electrode and the second electrode are configured to drive the photoelectric conversion layer; and in a direction perpendicular to a surface of the photoelectric conversion layer, the first electrode and the second electrode are overlapped with the photoelectric conversion layer respectively, and the photoelectric conversion layer includes an oxide semiconductor material.

公开(公告)号：US20240346974A1

公开(公告)日：2024-10-17

申请号：US18294166

申请日：2021-12-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Rui HUANG

IPC: G09G3/20 ,  G01J1/04 ,  G01J1/42 ,  G01J1/44 ,  G01J1/46

CPC classification number: G09G3/2003 ,  G01J1/0488 ,  G01J1/4204 ,  G01J1/4228 ,  G01J1/46 ,  G01J2001/4473 ,  G09G2320/0242 ,  G09G2360/144

Abstract: Provided are a display panel and a display apparatus; the display panel comprises at least one sensing module (100) arranged in a peripheral area (B), the sensing module (100) comprises at least one sensing unit, the sensing unit (101, 102, 103) comprises a sensing transistor, a first end of the sensing transistor receives an electrical signal, a gate of the sensing transistor receives a first control signal, and a second end of the sensing transistor outputs a photosensitive signal. When the sensing transistor receives the first control signal, a gate of the sensing transistor is set to be in a closed state; when the sensing transistor is illuminated, the voltage outputted by a drain electrode of the sensing transistor increases, the voltage change amount is read as the photosensitive signal, and ambient light is identified according to the spectral features of common ambient light in combination with the response results of different wavelengths. On the basis of that functionality, the display color temperature can be optimized and display performance is improved.

公开(公告)号：US20220020780A1

公开(公告)日：2022-01-20

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Li QIANG ,  Chao LUO ,  Huiqin ZHANG ,  Rui HUANG ,  Zhi WANG

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.