- 专利标题： PHOTOMASK, METHOD OF FABRICATING A PHOTOMASK, AND METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE USING A PHOTOMASK
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申请号： US17749167申请日： 2022-05-20
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公开(公告)号： US20220276552A1公开(公告)日： 2022-09-01
- 发明人: TZU HAN LIU , CHIH-WEI WEN , CHUNG-HUNG LIN
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW HSINCHU
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW HSINCHU
- 主分类号： G03F1/48
- IPC分类号： G03F1/48 ; G03F1/24 ; B32B27/40 ; C09J7/30 ; G03F1/60 ; C09J201/08 ; B32B27/30
摘要：
The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.
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