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公开(公告)号：US20220382143A1
公开(公告)日：2022-12-01
申请号：US17818392
申请日：2022-08-09
发明人： TZU HAN LIU , CHIH-WEI WEN , CHUNG-HUNG LIN
IPC分类号： G03F1/66 , H01L21/673
摘要： A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.
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公开(公告)号：US20220276552A1
公开(公告)日：2022-09-01
申请号：US17749167
申请日：2022-05-20
发明人： TZU HAN LIU , CHIH-WEI WEN , CHUNG-HUNG LIN
摘要： The present disclosure provides a photomask and a method for fabricating a semiconductor structure with a photomask. The photomask includes a substrate, and a polymer layer over a surface of the substrate, wherein the polymer layer includes a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the surface of the photomask.
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公开(公告)号：US20220075262A1
公开(公告)日：2022-03-10
申请号：US17200867
申请日：2021-03-14
发明人： CHIH-WEI WEN , HSIN-FU TSENG , CHIEN-LIN CHEN
摘要： A method includes: receiving a photomask; patterning a wafer by directing a first radiation beam to the wafer through the photomask at a first tilt angle; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam.
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公开(公告)号：US20210096460A1
公开(公告)日：2021-04-01
申请号：US16943881
申请日：2020-07-30
发明人： WU-HUNG KO , CHUNG-HUNG LIN , CHIH-WEI WEN
摘要： A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.
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公开(公告)号：US20240036463A1
公开(公告)日：2024-02-01
申请号：US18484432
申请日：2023-10-10
发明人： TZU HAN LIU , CHIH-WEI WEN , CHUNG-HUNG LIN
CPC分类号： G03F1/64 , G03F7/70025 , G03F7/70916 , G03F7/70983
摘要： The present disclosure provides a method for removing particles. The method includes: receiving a pellicle including a pellicle membrane, wherein a particle is disposed on the pellicle membrane; passing a light beam through an object lens, wherein the light beam is focused on a focal region in front of the pellicle membrane by the object lens, and the particle is attracted to be trapped at the focal region; and removing the particle from the pellicle membrane at the focal region.
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公开(公告)号：US20220291580A1
公开(公告)日：2022-09-15
申请号：US17826267
申请日：2022-05-27
发明人： WU-HUNG KO , CHUNG-HUNG LIN , CHIH-WEI WEN
摘要： A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
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7.发明申请公开(公告)号：US20210327735A1
公开(公告)日：2021-10-21
申请号：US17364457
申请日：2021-06-30
发明人： PO-CHIEN HUANG , CHUNG-HUNG LIN , CHIH-WEI WEN
IPC分类号： H01L21/673 , H01L21/033 , G03F7/20 , G03F1/66 , G03F1/62 , H01T23/00
摘要： The present disclosure provides a method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating; a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.
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公开(公告)号：US20240361684A1
公开(公告)日：2024-10-31
申请号：US18765359
申请日：2024-07-08
发明人： CHIH-WEI WEN , HSIN-FU TSENG , CHIEN-LIN CHEN
CPC分类号： G03F1/84 , G03F1/86 , G03F7/702 , G03F7/70608
摘要： An inspection apparatus includes: an inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to emit a first radiation beam for inspecting the photomask; and an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop.
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9.发明公开公开(公告)号：US20240297057A1
公开(公告)日：2024-09-05
申请号：US18661750
申请日：2024-05-13
发明人： PO-CHIEN HUANG , CHUNG-HUNG LIN , CHIH-WEI WEN
IPC分类号： H01L21/673 , G03F1/62 , G03F1/66 , G03F7/00 , H01L21/033 , H01T23/00
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70716 , G03F7/70925 , H01L21/0337 , H01T23/00
摘要： A method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.
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公开(公告)号：US20230367206A1
公开(公告)日：2023-11-16
申请号：US18360830
申请日：2023-07-28
发明人： WU-HUNG KO , CHUNG-HUNG LIN , CHIH-WEI WEN
CPC分类号： G03F1/82 , B08B7/0035 , B08B7/0071 , G03F7/70033 , G03F7/70733 , G03F7/70925 , H01L21/67028 , H01L21/67225
摘要： A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
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