Invention Application
- Patent Title: Low Resistivity Metal Contact Stack
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Application No.: US17335241Application Date: 2021-06-01
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Publication No.: US20220277961A1Publication Date: 2022-09-01
- Inventor: Annamalai Lakshmanan , Jacqueline S. Wrench , Feihu Wang , Yixiong Yang , Joung Joo Lee , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/02 ; C23C16/455
Abstract:
Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
Information query
IPC分类:
