Invention Application
- Patent Title: Semiconductor Device and Method of Forming Same
-
Application No.: US17186293Application Date: 2021-02-26
-
Publication No.: US20220278097A1Publication Date: 2022-09-01
- Inventor: Szu-Ying Chen , Sen-Hong Syue , Li-Ting Wang , Huicheng Chang , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L29/78

Abstract:
In an embodiment, a method includes forming a plurality of fins adjacent to a substrate, the plurality of fins comprising a first fin, a second fin, and a third fin; forming a first insulation material adjacent to the plurality of fins; reducing a thickness of the first insulation material; after reducing the thickness of the first insulation material, forming a second insulation material adjacent to the first insulation material and the plurality of fins; and recessing the first insulation material and the second insulation material to form a first shallow trench isolation (STI) region.
Public/Granted literature
- US11605635B2 Semiconductor device and method of forming same Public/Granted day:2023-03-14
Information query
IPC分类: