- 专利标题： HYBRID CHANNEL SEMICONDUCTOR DEVICE AND METHOD
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申请号： US17745655申请日： 2022-05-16
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公开(公告)号： US20220278200A1公开(公告)日： 2022-09-01
- 发明人: Pei-Yu Wang , Pei-Hsun Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L21/02 ; H01L29/66 ; H01L21/3065 ; H01L21/762 ; H01L21/306 ; H01L29/78 ; H01L27/088
摘要：
A device includes a first semiconductor strip protruding from a substrate, a second semiconductor strip protruding from the substrate, an isolation material surrounding the first semiconductor strip and the second semiconductor strip, a nanosheet structure over the first semiconductor strip, wherein the nanosheet structure is separated from the first semiconductor strip by a first gate structure including a gate electrode material, wherein the first gate structure partially surrounds the nanosheet structure, and a first semiconductor channel region and a semiconductor second channel region over the second semiconductor strip, wherein the first semiconductor channel region is separated from the second semiconductor channel region by a second gate structure including the gate electrode material, wherein the second gate structure extends on a top surface of the second semiconductor strip.
公开/授权文献
- US11742387B2 Hybrid channel semiconductor device and method 公开/授权日：2023-08-29
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