Invention Application
- Patent Title: METAL GRID STRUCTURE TO IMPROVE IMAGE SENSOR PERFORMANCE
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Application No.: US17328036Application Date: 2021-05-24
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Publication No.: US20220285412A1Publication Date: 2022-09-08
- Inventor: Ming Chyi Liu , Jiech-Fun Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Various embodiments of the present disclosure are directed towards an image sensor. The image sensor comprises a plurality of photodetectors disposed within a substrate. A metal grid layer is disposed over the substrate. The metal grid layer comprises a metal grid structure overlying a central pixel region of the substrate. The metal grid layer continuously extends from the central pixel region to a peripheral pixel region of the substrate that laterally encloses the central pixel region. An upper metal structure is disposed over the metal grid layer. The upper metal structure overlies the peripheral pixel region. The upper metal structure is laterally offset from the metal grid structure. A lower surface of the upper metal structure is disposed vertically over an upper surface of the metal grid structure.
Public/Granted literature
- US11756970B2 Metal grid structure to improve image sensor performance Public/Granted day:2023-09-12
Information query
IPC分类: