Invention Application
- Patent Title: SUPPORT FOR A SEMICONDUCTOR STRUCTURE
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Application No.: US17805206Application Date: 2022-06-02
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Publication No.: US20220301847A1Publication Date: 2022-09-22
- Inventor: Patrick Reynaud , Marcel Broekaart , Frédéric Allibert , Christelle Veytizou , Luciana Capello , Isabelle Bertrand
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Priority: FR1750646 20170126
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762
Abstract:
A support for a semiconductor structure includes a base substrate, a first silicon dioxide insulating layer positioned on the base substrate and having a thickness greater than 20 nm, and a charge trapping layer having a resistivity higher than 1000 ohm·cm and a thickness greater than 5 microns positioned on the first insulating layer.
Information query
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