Invention Application
- Patent Title: PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17465485Application Date: 2021-09-02
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Publication No.: US20220301872A1Publication Date: 2022-09-22
- Inventor: Yusuke KASAHARA
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2021-043157 20210317
- Main IPC: H01L21/033
- IPC: H01L21/033 ; G03F7/00 ; H01L21/027
Abstract:
A pattern forming method includes: forming a first film on a first region of a processing target film; forming a second film containing metal and carbon and different from the first film, on a second region of the processing target film; etching the first film; and etching the processing target film using the first film after the etching while the second film is exposed.
Public/Granted literature
- US11798806B2 Pattern forming method and method for manufacturing semiconductor device Public/Granted day:2023-10-24
Information query
IPC分类:
