Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Application No.: US17407641Application Date: 2021-08-20
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Publication No.: US20220301896A1Publication Date: 2022-09-22
- Inventor: Yoshinori TOKUDA , Toshiaki YANASE , Shinji MORI
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2021-043715 20210317
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3213

Abstract:
A substrate processing apparatus includes a chamber, a supply pipe, a discharge pipe, a trap section, a heater, a buffer section, and a cooling pipe. The chamber houses a substrate. The supply pipe supplies a processing gas into the chamber. The discharge pipe discharges a gas produced in the chamber. The trap section is disposed in the discharge pipe. The heater heats the trap section. The buffer section is disposed downstream of the trap section in the discharge pipe. The cooling pipe cools the buffer section.
Information query
IPC分类: