公开(公告)号：US20220301896A1

公开(公告)日：2022-09-22

申请号：US17407641

申请日：2021-08-20

Applicant: Kioxia Corporation

Inventor： Yoshinori TOKUDA ,  Toshiaki YANASE ,  Shinji MORI

IPC: H01L21/67 ,  H01L21/3213

Abstract: A substrate processing apparatus includes a chamber, a supply pipe, a discharge pipe, a trap section, a heater, a buffer section, and a cooling pipe. The chamber houses a substrate. The supply pipe supplies a processing gas into the chamber. The discharge pipe discharges a gas produced in the chamber. The trap section is disposed in the discharge pipe. The heater heats the trap section. The buffer section is disposed downstream of the trap section in the discharge pipe. The cooling pipe cools the buffer section.