Invention Application
- Patent Title: CRYSTAL MANUFACTURING METHOD, CRYSTAL MANUFACTURING APPARATUS AND SINGLE CRYSTAL
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Application No.: US17702158Application Date: 2022-03-23
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Publication No.: US20220307157A1Publication Date: 2022-09-29
- Inventor: Katsumi KAWASAKI , Jun ARIMA , Minoru FUJITA , Jun HIRABAYASHI
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2021-051396 20210325
- Main IPC: C30B15/30
- IPC: C30B15/30 ; C30B29/16 ; C30B15/16 ; C30B15/20

Abstract:
In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.
Public/Granted literature
- US11846037B2 Crystal manufacturing method, crystal manufacturing apparatus and single crystal Public/Granted day:2023-12-19
Information query
IPC分类: