公开(公告)号：US20240313130A1

公开(公告)日：2024-09-19

申请号：US18676107

申请日：2024-05-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/47

CPC classification number: H01L29/8725 ,  H01L29/47

Abstract: Disclosed herein is a junction barrier Schottky diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode and a semiconductor material having a conductivity type opposite to that of the drift layer. A bottom surface of the center trench contacts the semiconductor material without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.

公开(公告)号：US20240072179A1

公开(公告)日：2024-02-29

申请号：US18260519

申请日：2022-01-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A width W1 of an outer peripheral trench formed in the drift layer is larger than a width W2 of a center trench. An outer peripheral wall S1 of the outer peripheral trench is curved so as to approach vertical toward the outside, while an inner peripheral wall S2 thereof is closer to vertical than the outer peripheral wall S1. This relaxes an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

公开(公告)号：US20210017668A1

公开(公告)日：2021-01-21

申请号：US16982280

申请日：2019-01-25

Applicant: TDK CORPORATION

Inventor： Katsumi KAWASAKI ,  Jun HIRABAYASHI ,  Minoru FUJITA ,  Daisuke INOKUCHI ,  Jun ARIMA ,  Makio KONDO

IPC: C30B15/34 ,  C30B29/16

Abstract: A die for EFG-based single crystal growth includes a lower surface to be immersed into a raw material melt with an impurity added, a rectangular upper surface facing a seed crystal and having a long side and a short side, and a plurality of slit sections extending from the lower surface to the upper surface and causing the raw material melt to ascend from the lower surface to the upper surface. Respective longitudinal directions of openings of the plurality of slit sections on the upper surface are parallel to one another and non-parallel to the long side of the upper surface.

公开(公告)号：US20170211204A1

公开(公告)日：2017-07-27

申请号：US15329478

申请日：2015-08-06

Applicant: TDK CORPORATION

Inventor： Kazuhito YAMASAWA ,  Atsushi OHIDO ,  Katsumi KAWASAKI

IPC: C30B29/40 ,  C30B1/02 ,  C30B19/02 ,  H01L21/02 ,  C30B19/08 ,  C30B9/12 ,  C30B29/20 ,  C30B1/10 ,  C30B19/12

CPC classification number: C30B29/403 ,  C30B1/02 ,  C30B1/10 ,  C30B5/02 ,  C30B9/12 ,  C30B19/02 ,  C30B19/08 ,  C30B19/12 ,  C30B25/02 ,  C30B29/20 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02628 ,  H01L21/205

Abstract: An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.

公开(公告)号：US20250081485A1

公开(公告)日：2025-03-06

申请号：US18891242

申请日：2024-09-20

Applicant: TDK CORPORATION

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

Abstract: Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode and a p-type semiconductor layer each contacting the drift layer, an n-type semiconductor layer contacting the anode electrode and the drift layer, a metal layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and a cathode electrode contacting the semiconductor substrate.

公开(公告)号：US20250003110A1

公开(公告)日：2025-01-02

申请号：US18886067

申请日：2024-09-16

Applicant: TDK Corporation

Inventor： Katsumi KAWASAKI ,  Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi

IPC: C30B15/10 ,  C30B15/02 ,  C30B29/16

Abstract: A crucible for growing an oxide single crystal comprises a body that includes an oxide containing an additive. In the oxide of the body, a plurality of regions arranged along one axis is set and, among the regions, a concentration of the additive in a first region is higher than a concentration of the additive in a second region. A crystal manufacturing method grows an oxide single crystal by moving a position of an exposed surface of a melt in a crucible along a vertical direction while keeping a seed crystal in contact with the exposed surface. In a gallium oxide single crystal, a concentration of an additive along a growth axis may be within the range of ±5% of an average concentration of the additive.

公开(公告)号：US20200283928A1

公开(公告)日：2020-09-10

申请号：US16644719

申请日：2018-08-21

Applicant: TDK Corporation

Inventor： Atsushi OHIDO ,  Kazuhito YAMASAWA ,  Katsumi KAWASAKI

IPC: C30B29/68 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  C30B29/20 ,  C30B29/40

Abstract: A substrate 10 comprises: a first layer L1 containing crystalline aluminum nitride; a second layer L2 containing crystalline α-alumina; and an intermediate layer Lm sandwiched between the first layer L1 and the second layer L2 and containing aluminum, nitrogen, and oxygen, and the content of nitrogen in the intermediate layer Lm decreases in a direction Z from the first layer L1 toward the second layer L2, and the content of oxygen in the intermediate layer Lm increases in the direction Z from the first layer L1 toward the second layer L2.

公开(公告)号：US20180038011A1

公开(公告)日：2018-02-08

申请号：US15554109

申请日：2016-03-02

Applicant: TDK CORPORATION

Inventor： Kazuhito YAMASAWA ,  Atsushi OHIDO ,  Katsumi KAWASAKI

IPC: C30B25/20 ,  C30B29/40

Abstract: An alumina substrate on which an AlN layer is formed and that causes less warping, and a substrate material strong enough to withstand normal handling when an AlN crystal is grown upon it, and prevents cracking and fracturing of a grown crystal when stress is applied during growing or cooling. The substrate has a gap and a rare earth element-containing region inside the AlN layer or at the interface between the AlN layer and the alumina substrate. Warping of the AlN layer can be reduced by lattice-mismatch stress being concentrated at the region and releasing of stress by the gap. The region having a concentrating of stress, and the gap having a low mechanical strength, can induce crackings and fracturings. As a result, contamination of crackings and fracturings into the crystal grown on the substrate can be prevented. The region can ensure a level of mechanical strength sufficient for handling.

公开(公告)号：US20240170335A1

公开(公告)日：2024-05-23

申请号：US18549255

申请日：2022-02-24

Applicant: TDK Corporation

Inventor： Minoru FUJITA ,  Jun ARIMA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L21/78

CPC classification number: H01L21/78

Abstract: To divide a β-type gallium oxide substrate having a (001) plane as a main surface satisfactorily. A method of diving a gallium oxide substrate includes: a step of forming a plurality of dividing grooves along the extending direction of the (100) plane of a β-type gallium oxide substrate having the (001) plane as the main surface; a step of processing the β-type gallium oxide substrate into strips by cutting the substrate in a direction perpendicular to the extending direction of the dividing grooves; and a step of cleaving the strip-shaped β-type gallium oxide substrates 10 along the dividing grooves for singulation. Since the plurality of dividing grooves are thus formed along the cleavage planes, the substrate can be divided satisfactorily without causing flaky peeling on the cleavage surfaces by cleaving the substrate along the dividing grooves.

公开(公告)号：US20240055536A1

公开(公告)日：2024-02-15

申请号：US18260520

申请日：2022-01-28

Applicant: TDK Corporation

Inventor： Jun ARIMA ,  Minoru FUJITA ,  Katsumi KAWASAKI ,  Jun HIRABAYASHI

IPC: H01L29/872 ,  H01L29/24

CPC classification number: H01L29/8725 ,  H01L29/24

Abstract: To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.