- 专利标题: MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
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申请号: US17346627申请日: 2021-06-14
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公开(公告)号: US20220310635A1公开(公告)日: 2022-09-29
- 发明人: Hai-Dang Trinh , Yi Yang Wei , Bi-Shen Lee , Fa-Shen Jiang , Hsun-Chung Kuang , Cheng-Yuan Tsai
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/11507
- IPC分类号: H01L27/11507 ; H01L49/02
摘要:
In some embodiments, the present disclosure relates to an integrated chip that includes one or more interconnect dielectric layers arranged over a substrate. A bottom electrode is disposed over a conductive structure and extends through the one or more interconnect dielectric layers. A top electrode is disposed over the bottom electrode. A ferroelectric layer is disposed between and contacts the bottom electrode and the top electrode. The ferroelectric layer includes a first lower horizontal portion, a first upper horizontal portion arranged above the first lower horizontal portion, and a first sidewall portion and coupling the first lower horizontal portion to the first upper horizontal portion.
公开/授权文献
- US11723212B2 Memory window of MFM MOSFET for small cell size 公开/授权日:2023-08-08
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