- 专利标题: Multi-Layer Film Device and Method
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申请号: US17849995申请日: 2022-06-27
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公开(公告)号: US20220328690A1公开(公告)日: 2022-10-13
- 发明人: Yao-Jen Chang , Chih-Chien Chi , Chen-Yuan Kao , Hung-Wen Su , Kai-Shiang Kuo , Po-Cheng Shih , Jun-Yi Ruan
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/66 ; H01L23/522 ; H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L21/8238 ; H01L27/092
摘要:
A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.
公开/授权文献
- US11777035B2 Multi-layer film device and method 公开/授权日:2023-10-03
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