- 专利标题: SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING
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申请号: US17857993申请日: 2022-07-05
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公开(公告)号: US20220336303A1公开(公告)日: 2022-10-20
- 发明人: HSIEN-WEI CHEN , CHING-JUNG YANG , MING-FA CHEN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/13
- IPC分类号: H01L23/13 ; H01L23/29 ; H01L23/00 ; H01L23/31 ; H01L23/538 ; H01L25/065
摘要:
A method of forming a semiconductor package device includes: providing a substrate; bonding a first die to an upper surface of the substrate through a bonding layer; bonding a second die to the upper surface of the substrate through the bonding layer, the second die laterally separated from the first die; depositing an insulation material between the first die and the second die and filling a gap measured between sidewalk of the first die and the second die; forming a first interconnect layer over the first die and the second die to form the semiconductor package device; and performing a testing operation on semiconductor package device with the substrate in place. A Young's modulus of the substrate is greater than that of the insulation material.
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