Invention Application
- Patent Title: DUAL SACRIFICIAL MATERIAL REPLACEMENT PROCESS FOR A THREE-DIMENSIONAL MEMORY DEVICE AND STRUCTURE FORMED BY THE SAME
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Application No.: US17233799Application Date: 2021-04-19
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Publication No.: US20220336486A1Publication Date: 2022-10-20
- Inventor: Keigo KITAZAWA , Naoto NORIZUKI , Shunsuke TAKUMA
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/24 ; H01L27/11597
Abstract:
A vertical repetition of a unit layer stack includes an insulating layer, a first sacrificial material layer, another insulating layer, and a second sacrificial material layer. A memory opening is formed through the vertical repetition, and a memory opening fill structure is formed in the memory opening. A backside trench is formed through the alternating stack. The first sacrificial material layers are replaced with first electrically conductive layers, and the second sacrificial material layer are replaced with second electrically conductive layers after formation of the first electrically conductive layers.
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