Invention Application
- Patent Title: SEMICONDUCTOR DEVICE INCLUDING HIGH FREQUENCY AMPLIFIER CIRCUIT, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
-
Application No.: US17619669Application Date: 2020-06-16
-
Publication No.: US20220345095A1Publication Date: 2022-10-27
- Inventor: Hitoshi KUNITAKE , Takayuki IKEDA , Kiyoshi KATO , Yuichi YANAGISAWA , Shota MIZUKAMI , Kazuki TSUDA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP2019-121564 20190628,JP2019-183926 20191004,JP2020-078408 20200427,JP2020-081849 20200507
- International Application: PCT/IB2020/055591 WO 20200616
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H03F1/02 ; H01L29/786

Abstract:
A semiconductor device is provided in which power consumption is reduced and an increase in circuit area is inhibited. The semiconductor device includes a high frequency amplifier circuit, an envelope detection circuit, and a power supply circuit. The power supply circuit has a function of supplying a power supply potential to the high frequency amplifier circuit, an output of the high frequency amplifier circuit is connected to the envelope detection circuit, and an output of the envelope detection circuit is connected to the power supply circuit. The power supply circuit can reduce the power consumption by changing the power supply potential in accordance with the output of the high frequency amplifier circuit. The use of an OS transistor in the envelope detection circuit can inhibit an increase in circuit area.
Public/Granted literature
Information query
IPC分类: