公开(公告)号：US20210320209A1

公开(公告)日：2021-10-14

申请号：US17272400

申请日：2019-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Naoki OKUNO ,  Tomosato KANAGAWA ,  Shota MIZUKAMI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide arc substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

公开(公告)号：US20220085214A1

公开(公告)日：2022-03-17

申请号：US17424625

申请日：2019-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shota MIZUKAMI ,  Tatsuya ONUKI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor. The transistor includes a first conductor, a first insulator over the first conductor, an oxide provided with a groove portion over the first insulator, a second conductor and a third conductor disposed in a region that does not overlap with the groove portion in the oxide, a second insulator disposed between the second conductor and the third conductor and in the groove portion in the oxide, and a fourth conductor over the second insulator. A bottom surface of the fourth conductor is lower than a bottom surface of the second conductor and a bottom surface of the third conductor. In a cross-sectional view of the transistor in the channel length direction, an end portion of a bottom surface of the groove portion has a curvature.

公开(公告)号：US20220345095A1

公开(公告)日：2022-10-27

申请号：US17619669

申请日：2020-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Takayuki IKEDA ,  Kiyoshi KATO ,  Yuichi YANAGISAWA ,  Shota MIZUKAMI ,  Kazuki TSUDA

IPC: H03F3/195 ,  H03F1/02 ,  H01L29/786

Abstract: A semiconductor device is provided in which power consumption is reduced and an increase in circuit area is inhibited. The semiconductor device includes a high frequency amplifier circuit, an envelope detection circuit, and a power supply circuit. The power supply circuit has a function of supplying a power supply potential to the high frequency amplifier circuit, an output of the high frequency amplifier circuit is connected to the envelope detection circuit, and an output of the envelope detection circuit is connected to the power supply circuit. The power supply circuit can reduce the power consumption by changing the power supply potential in accordance with the output of the high frequency amplifier circuit. The use of an OS transistor in the envelope detection circuit can inhibit an increase in circuit area.

公开(公告)号：US20220302312A1

公开(公告)日：2022-09-22

申请号：US17642346

申请日：2020-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi Kunitake ,  Yuichi YANAGISAWA ,  Shota MIZUKAMI ,  Kazuki TSUDA ,  Haruyuki BABA ,  Shunpei YAMAZAKI

IPC: H01L29/786

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm. The thickness of the fourth oxide between the second conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.

公开(公告)号：US20240395943A1

公开(公告)日：2024-11-28

申请号：US18795876

申请日：2024-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Naoki OKUNO ,  Tomosato KANAGAWA ,  Shota MIZUKAMI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

公开(公告)号：US20220399338A1

公开(公告)日：2022-12-15

申请号：US17773068

申请日：2020-10-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hiroki KOMAGATA ,  Yoshihiro KOMATSU ,  Shinya SASAGAWA ,  Takashi HAMADA ,  Yasumasa YAMANE ,  Shota MIZUKAMI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.