Invention Application
- Patent Title: STATIC RANDOM ACCESS MEMORY DEVICE
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Application No.: US17577198Application Date: 2022-01-17
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Publication No.: US20220351772A1Publication Date: 2022-11-03
- Inventor: Inhak LEE , Sang-Yeop BAECK , Younghwan PARK , Jaesung CHOI
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0057468 20210503
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C11/418 ; G11C11/412

Abstract:
Disclosed is a static random access memory (SRAM) device. According to example embodiments of the present disclosure, a control logic of the SRAM device may include a tracking circuit connected with metal lines for tracking the number of columns of a memory cell array and the number of rows of the memory cell array. By the tracking circuit, a length of word lines of the memory cell array and a length of bit lines of the memory cell array may be tracked. The control logic of the SRAM device may generate control pulses optimized for the size of the memory cell array, based on a tracking result(s) of the tracking circuit. Accordingly, a power and a time necessary for a write operation and a read operation may be reduced.
Public/Granted literature
- US11875844B2 Static random access memory device Public/Granted day:2024-01-16
Information query
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