公开(公告)号：US20240038820A1

公开(公告)日：2024-02-01

申请号：US18085806

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.

公开(公告)号：US20220293507A1

公开(公告)日：2022-09-15

申请号：US17514088

申请日：2021-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun LIM ,  Younghwan PARK ,  Kwangjin LEE ,  Dongha LEE ,  Hyuntaek CHOI

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  G06K9/00

Abstract: A fingerprint sensor package includes a first substrate including a core insulating layer; a first bonding pad on the core insulating layer; and an external connection pad between an edge of the second surface of the core insulating layer and the first bonding pad, a second substrate on the core insulating layer, the second substrate including: a plurality of first sensing patterns spaced apart in a first direction and extending in a second direction intersecting with the first direction; a plurality of second sensing patterns spaced apart from each other in the second direction and extending in the first direction; and a second bonding pad, a conductive wire connecting the first bonding pad to the second bonding pad; a controller chip on the second substrate; and a molding layer covering the second substrate and the first bonding pad and spaced apart from the external connection pad.

公开(公告)号：US20220148948A1

公开(公告)日：2022-05-12

申请号：US17227850

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan PARK ,  Jongseob KIM ,  Jaejoon OH ,  Soogine CHONG ,  Sunkyu HWANG

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/367 ,  H01L29/20

Abstract: Provided are a semiconductor device package and/or a method of fabricating the semiconductor device package. The semiconductor device package may include a semiconductor device including a plurality of electrode pads on an upper surface of the semiconductor device, a lead frame including a plurality of conductive members bonded to the plurality of electrode pads, and a mold between the plurality of conductive members.

公开(公告)号：US20240055330A1

公开(公告)日：2024-02-15

申请号：US18495697

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan PARK ,  Jongseob KIM ,  Jaejoon OH ,  Soogine CHONG ,  Sunkyu HWANG

IPC: H01L23/495 ,  H01L21/48

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L23/4951 ,  H01L23/49524 ,  H01L23/49568

Abstract: A semiconductor device package includes a lead frame, a semiconductor device including a first face connected to the lead frame, a second face that faces the first face, a gate pad, a drain pad, and a source pad, the gate pad exposed on the second face of the semiconductor, the drain pad exposed on the second face of the second face, and the source pad exposed on the second face, a gate clip connected to the gate pad, a drain clip connected to the drain pad, a source clip connected to the source pad, the source clip connected to the lead frame, and a molding that seals the lead frame, the semiconductor device, the source clip, the drain clip, and the gate clip.

公开(公告)号：US20240038822A1

公开(公告)日：2024-02-01

申请号：US18120862

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Joosung KIM ,  Younghwan PARK ,  Jinjoo PARK ,  Dongchul SHIN

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.

公开(公告)号：US20220310833A1

公开(公告)日：2022-09-29

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul SHIN ,  Boram KIM ,  Younghwan PARK ,  Jongseob KIM ,  Joonyong KIM ,  Junhyuk PARK ,  Jaejoon OH ,  Minchul YU ,  Soogine CHONG ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US20210184010A1

公开(公告)日：2021-06-17

申请号：US17016877

申请日：2020-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soogine CHONG ,  Jongseob KIM ,  Joonyong KIM ,  Younghwan PARK ,  Junhyuk PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L29/423 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778 ,  H01L21/02 ,  H01L21/285 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

公开(公告)号：US20240072100A1

公开(公告)日：2024-02-29

申请号：US18214736

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.

公开(公告)号：US20240047614A1

公开(公告)日：2024-02-08

申请号：US18118993

申请日：2023-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joosung KIM ,  Younghwan PARK ,  Jinjoo PARK ,  Dongchul SHIN

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/04 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/12 ,  H01L33/04 ,  H01L33/0075

Abstract: A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.

公开(公告)号：US20230019799A1

公开(公告)日：2023-01-19

申请号：US17679288

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan PARK ,  Woochul JEON ,  Jongseob KIM

IPC: H01L29/778 ,  H01L29/40

Abstract: A high electron mobility transistor includes a channel layer; a barrier layer on the channel layer and having an energy bandgap greater than an energy bandgap of the channel layer; a gate structure on the barrier layer; a source electrode and a drain electrode spaced apart from each other on the barrier layer with the gate structure therebetween; a field plate electrically connected to the source electrode and extending above the gate structure; and a field dispersion layer in contact with the barrier layer and the drain electrode. The field dispersion layer may extend toward the gate structure.