A patterning method includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a first layer of a wet photoresist, deposited by spin-on deposition, over a second layer of a dry photoresist, deposited by vapor deposition. The multilayer photoresist stack is exposed to a first pattern of actinic radiation including relative, spatially-varying doses of actinic radiation and including high-dose regions, mid-dose regions and low-dose regions. The multilayer photoresist stack and the first pattern of actinic radiation are configured such that after the exposing the multilayer photoresist stack to the first pattern of actinic radiation, in the high-dose regions, developability of both the first layer and the second layer is changed; in the mid-dose regions, developability of the first layer is changed while developability of the second layer is unchanged; in the low-dose regions, developability of both the first layer and the second layer is unchanged.