Invention Application
- Patent Title: LIGHT-EMITTING DIODE SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
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Application No.: US17427628Application Date: 2020-10-30
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Publication No.: US20220352000A1Publication Date: 2022-11-03
- Inventor: Haixu LI , Xiao ZHANG , Fei WANG , Mingxing WANG , Shulei LI , Xue DONG , Guangcai YUAN , Zhanfeng CAO , Xin GU , Ke WANG , Feng QU , Xuan LIANG , Junwei YAN
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- International Application: PCT/CN2020/125490 WO 20201030
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L25/075 ; H01L33/62

Abstract:
A light-emitting diode substrate, a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the light-emitting diode substrate includes: forming an epitaxial layer group of M light-emitting diode chips on a substrate; transferring N epitaxial layer groups on N substrates onto a transition carrier substrate, the N epitaxial layer groups on the N substrates being densely arranged on the transition carrier substrate; and transferring at least part of N*M light-emitting diode chips corresponding to the N epitaxial layer groups on the transition carrier substrate onto a driving substrate, an area of the transition carrier substrate is greater than or equal to a sum of areas of the N substrates, M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 2.
Public/Granted literature
- US12249529B2 Light-emitting diode substrate and manufacturing method thereof, display device Public/Granted day:2025-03-11
Information query
IPC分类: