Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
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Application No.: US17879574Application Date: 2022-08-02
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Publication No.: US20220367360A1Publication Date: 2022-11-17
- Inventor: Mahbub Rashed , Irene Y. Lin , Steven Soss , Jeff Kim , Chinh Nguyen , Marc Tarabbia , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/8234 ; H01L27/02 ; H01L21/768 ; H01L21/285 ; H01L21/8238 ; H01L23/532 ; H01L27/092 ; H01L29/08

Abstract:
A semiconductor device including four transistors. Gates of first and third transistors extend longitudinally as part of a first linear strip. Gates of second and fourth transistors extend longitudinally as part of a second linear strip parallel to and spaced apart from first linear strip. Aligned first and second gate cut isolations separate gates of first and second transistor from gates of third transistor and fourth transistor respectively. First and second CB layers connect to the gate of first transistor and second transistor respectively. CA layer extends longitudinally between first end and second end of CA layer connects to CB layers. CB layers are electrically connected to gates of first transistor adjacent first end of CA layer and second transistor adjacent second end of CA layer respectively. CA layer extends substantially parallel to first and second linear strips and is substantially perpendicular to first and second CB layers.
Public/Granted literature
- US12148702B2 Semiconductor device with transistor local interconnects Public/Granted day:2024-11-19
Information query
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