Transistor Source/Drain Regions and Methods of Forming the Same
Abstract:
In an embodiment, a device includes: a first nanostructure; a source/drain region adjoining a first channel region of the first nanostructure, the source/drain region including: a main layer; and a first liner layer between the main layer and the first nanostructure, a carbon concentration of the first liner layer being greater than a carbon concentration of the main layer; an inter-layer dielectric on the source/drain region; and a contact extending through the inter-layer dielectric, the contact connected to the main layer, the contact spaced apart from the first liner layer.
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