Invention Application
- Patent Title: Transistor Source/Drain Regions and Methods of Forming the Same
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Application No.: US17565716Application Date: 2021-12-30
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Publication No.: US20220367625A1Publication Date: 2022-11-17
- Inventor: Wei-Min Liu , Li-Li Su , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/66 ; H01L21/8234

Abstract:
In an embodiment, a device includes: a first nanostructure; a source/drain region adjoining a first channel region of the first nanostructure, the source/drain region including: a main layer; and a first liner layer between the main layer and the first nanostructure, a carbon concentration of the first liner layer being greater than a carbon concentration of the main layer; an inter-layer dielectric on the source/drain region; and a contact extending through the inter-layer dielectric, the contact connected to the main layer, the contact spaced apart from the first liner layer.
Information query
IPC分类: