Invention Application
- Patent Title: IGZO THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
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Application No.: US17767333Application Date: 2020-08-26
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Publication No.: US20220367722A1Publication Date: 2022-11-17
- Inventor: Wangran WU , Guangan YANG , Feng LIN , Guipeng SUN , Yaohui WANG , Weifeng SUN , Longxing SHI
- Applicant: SOUTHEAST UNIVERSITY , CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Nanjing, Jiangsu; CN Wuxi
- Assignee: SOUTHEAST UNIVERSITY,CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: SOUTHEAST UNIVERSITY,CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Nanjing, Jiangsu; CN Wuxi
- Priority: CN201910949865.5 20191008
- International Application: PCT/CN2020/111426 WO 20200826
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L29/66
Abstract:
An IGZO thin-film transistor and a method for manufacturing same. The method comprises: acquiring a substrate; forming an IGZO layer on the substrate by means of a solution process; doping V impurities on a surface of the IGZO layer by means of a spin doping process; forming a source electrode at one side of the IGZO layer, and forming a drain electrode at the other side thereof; forming a gate dielectric layer on the doped IGZO layer; and forming a gate electrode on the gate dielectric layer.
Information query
IPC分类:
