Invention Application
- Patent Title: NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THE DEVICE
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Application No.: US17767293Application Date: 2020-10-08
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Publication No.: US20220367748A1Publication Date: 2022-11-17
- Inventor: Toshiyuki TAKIZAWA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Priority: JP2019-186371 20191009
- International Application: PCT/JP2020/038155 WO 20201008
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/18
Abstract:
A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.
Public/Granted literature
- US12100936B2 Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device Public/Granted day:2024-09-24
Information query
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