公开(公告)号：US20220367748A1

公开(公告)日：2022-11-17

申请号：US17767293

申请日：2020-10-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshiyuki TAKIZAWA

IPC: H01L33/00 ,  H01L33/18

Abstract: A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

公开(公告)号：US20230326624A1

公开(公告)日：2023-10-12

申请号：US18043510

申请日：2021-09-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takashi SASAKI ,  Seiji TAGUCHI ,  Yoshihisa NAGASAKI ,  Toshiyuki TAKIZAWA

IPC: H01B3/10 ,  H01L29/51 ,  H01L21/28 ,  H01G4/10 ,  H01G4/33

CPC classification number: H01B3/10 ,  H01L29/517 ,  H01L21/28194 ,  H01G4/105 ,  H01G4/33

Abstract: An oxide insulator film contains a first metal oxide and a second metal oxide. An electrical conductivity of the second metal oxide is lower than an electrical conductivity of the first metal oxide. The oxide insulator film includes particles of the first metal oxide which are dispersed in a matrix including the second metal oxide.

公开(公告)号：US20230167271A1

公开(公告)日：2023-06-01

申请号：US17922549

申请日：2021-04-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Keisuke HAYASHI ,  Nobuyuki MATSUZAWA ,  Toshiyuki TAKIZAWA ,  Hiroyuki MAESHIMA

IPC: C08K5/42 ,  H01G9/028 ,  H01G9/15

CPC classification number: C08K5/42 ,  H01G9/028 ,  H01G9/15

Abstract: An additive for an organic conductor includes a naphthalene ring, at least two sulfonic acid groups bonded to the naphthalene ring, and at least one carboxy group bonded to the naphthalene ring. In the case where the number of the sulfonic acid groups is two, when the sulfonic acid groups are respectively referred to as a first sulfonic acid group and a second sulfonic acid group, and a carbon atom of the naphthalene ring bonded to the first sulfonic acid group and a carbon atom of the naphthalene ring bonded to the second sulfonic acid group are respectively referred to as a first carbon atom and a second carbon atom, the number n of carbon atoms present between the first carbon atom and the second carbon atom is three or less.